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USEMI
| Model： | TW015Z120C,S1F |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Description： | G3 1200V SIC-MO |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$61.3300
$61.3300
30
$53.8900
$1,616.7000
120
$50.1800
$6,021.6000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 18V |
| Power Dissipation (Max) | 431W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 11.7mA |
| Supplier Device Package | TO-247-4L(X) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 800 V |
