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USEMI
| Model： | TRS12V65H,LQ |
|---|---|
| Product Category： | Single Diodes |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Description： | G3 SIC-SBD 650V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$3.2800
$3.2800
10
$2.7500
$27.5000
100
$2.2300
$223.0000
500
$1.9800
$990.0000
1000
$1.7000
$1,700.0000
2500
$1.6000
$4,000.0000
5000
$1.5300
$7,650.0000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 778pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
