Language:en 
- zh-cn
- en
USEMI
| Model： | SSM6K818R,LF |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Description： | N-CH MOSFET 30V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$0.6700
$0.6700
10
$0.5800
$5.8000
100
$0.4000
$40.0000
500
$0.3400
$170.0000
1000
$0.2900
$290.0000
3000
$0.2500
$750.0000
6000
$0.2400
$1,440.0000
9000
$0.2300
$2,070.0000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 4A, 4.5V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | 6-TSOP-F |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 15 V |
| Qualification | AEC-Q101 |
