Language:en 
- zh-cn
- en
USEMI
| Model： | NXH003P120M3F2PTNG |
|---|---|
| Product Category： | FET, MOSFET Arrays |
| Manufacturer： | Sanyo Semiconductor/onsemi |
| Description： | SILICON CARBIDE |
| Encapsulation： | - |
| Package： | Tray |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$258.7200
$258.7200
20
$242.3200
$4,846.4000
40
$233.2100
$9,328.4000
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tray |
| Product Status | ACTIVE |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.48kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
| Vgs(th) (Max) @ Id | 4.4V @ 160mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
