Language:en 
- zh-cn
- en
USEMI
| Model： | GT750P10M |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| Description： | MOSFET P-CH 100 |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
Quantity
Price
Total Price
800
$0.4400
$352.0000
8000
$0.4300
$3,440.0000
16000
$0.4100
$6,560.0000
32000
$0.3600
$11,520.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 10V |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1902 pF @ 50 V |
