Language:en 
- zh-cn
- en
USEMI
| Model： | G3K8N15HE |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| Description： | MOSFET N-CH ESD |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
Quantity
Price
Total Price
2500
$0.1100
$275.0000
15000
$0.1000
$1,500.0000
30000
$0.0900
$2,700.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 2A, 10V |
| Power Dissipation (Max) | 2.16W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 558 pF @ 75 V |
