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USEMI
| Model： | EPC7018GC |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | EPC Space |
| Description： | GAN FET HEMT 10 |
| Encapsulation： | - |
| Package： | Bulk |
| RoHS Status： | |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$316.8000
$316.8000
10
$296.7200
$2,967.2000
| TYPE | DESCRIPTION |
| Mfr | EPC Space |
| Series | eGaN® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 5-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 12mA |
| Supplier Device Package | 5-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 50 V |
