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USEMI
| Model： | XP10TN135N |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | YAGEO XSEMI |
| Description： | MOSFET N-CH 100 |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$0.4800
$0.4800
10
$0.4100
$4.1000
100
$0.2800
$28.0000
500
$0.2200
$110.0000
1000
$0.1800
$180.0000
3000
$0.1600
$480.0000
6000
$0.1500
$900.0000
9000
$0.1400
$1,260.0000
30000
$0.1400
$4,200.0000
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XP10TN135 |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2A, 10V |
| Power Dissipation (Max) | 1.38W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 25 V |
